Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement.
Identifieur interne : 000346 ( Main/Exploration ); précédent : 000345; suivant : 000347Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement.
Auteurs : RBID : pubmed:24367743Abstract
This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.
DOI: 10.3762/bjnano.4.85
PubMed: 24367743
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First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">24367743</PMID><DateCreated><Year>2013</Year><Month>12</Month><Day>24</Day></DateCreated><DateCompleted><Year>2013</Year><Month>12</Month><Day>24</Day></DateCompleted><DateRevised><Year>2014</Year><Month>01</Month><Day>24</Day></DateRevised><Article PubModel="Electronic-eCollection"><Journal><ISSN IssnType="Electronic">2190-4286</ISSN><JournalIssue CitedMedium="Print"><Volume>4</Volume><PubDate><Year>2013</Year></PubDate></JournalIssue><Title>Beilstein journal of nanotechnology</Title><ISOAbbreviation>Beilstein J Nanotechnol</ISOAbbreviation></Journal><ArticleTitle>Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement.</ArticleTitle><Pagination><MedlinePgn>750-7</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.3762/bjnano.4.85</ELocationID><Abstract><AbstractText>This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Bugot</LastName><ForeName>Cathy</ForeName><Initials>C</Initials><Affiliation>Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 - EDF - CNRS - Chimie Paristech, 6 quai Watier, 78401 Chatou, France.</Affiliation></Author><Author ValidYN="Y"><LastName>Schneider</LastName><ForeName>Nathanaëlle</ForeName><Initials>N</Initials><Affiliation>Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 - EDF - CNRS - Chimie Paristech, 6 quai Watier, 78401 Chatou, France.</Affiliation></Author><Author ValidYN="Y"><LastName>Lincot</LastName><ForeName>Daniel</ForeName><Initials>D</Initials><Affiliation>Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 - EDF - CNRS - Chimie Paristech, 6 quai Watier, 78401 Chatou, France.</Affiliation></Author><Author ValidYN="Y"><LastName>Donsanti</LastName><ForeName>Frédérique</ForeName><Initials>F</Initials><Affiliation>Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 - EDF - CNRS - Chimie Paristech, 6 quai Watier, 78401 Chatou, France.</Affiliation></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>11</Month><Day>13</Day></ArticleDate></Article><MedlineJournalInfo><Country>Germany</Country><MedlineTA>Beilstein J Nanotechnol</MedlineTA><NlmUniqueID>101551563</NlmUniqueID><ISSNLinking>2190-4286</ISSNLinking></MedlineJournalInfo><OtherID Source="NLM">PMC3869344</OtherID><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">atomic layer deposition</Keyword><Keyword MajorTopicYN="N">buffer layer</Keyword><Keyword MajorTopicYN="N">indium oxi-sulfide</Keyword><Keyword MajorTopicYN="N">plasma enhancement</Keyword><Keyword MajorTopicYN="N">thin film solar cells</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="ecollection"><Year>2013</Year><Month></Month><Day></Day></PubMedPubDate><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>7</Month><Day>31</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2013</Year><Month>10</Month><Day>24</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2013</Year><Month>11</Month><Day>13</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>12</Month><Day>25</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>12</Month><Day>25</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>12</Month><Day>25</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.3762/bjnano.4.85</ArticleId><ArticleId IdType="pubmed">24367743</ArticleId><ArticleId IdType="pmc">PMC3869344</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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